EasyGaN

We develop epiwafers for the GaN on Silicon semiconductor market using Molecular Beam Epitaxy. In addition, we are currently developing an ultra-thin GaN on Silicon epiwafer for the Radio Frequency 5G millimeter wave device market. We are happy to strengthen our RF activity by welcoming Élodie Carneiro who joined EasyGaN as a doctorate student. EasyGaN is a startup providing epitaxy solutions to unleash the full potential of GaN-on-Silicon technology. Located in Sophia Antipolis, EasyGaN is a CRHEA-CNRS spin-off, an internationally recognized Research Center with 20+ years of experience in the epitaxial growth of GaN. Our first product is a very thin high-quality Aluminium Nitride (AlN) layer grown on top of a silicon wafer. Electrical Engineer and MBA, André Bonnardot has 25 years of experience in the Mobile and Semiconductor industry. Research Director at CNRS, Fabrice Semond has 20+ years of experience in the epitaxial growth of GaN on silicon substrate.