Ganwafer is a top-class enterprise for compound semiconductor material integrating semiconductor crystal growth, process development, and epitaxy. Semiconductor wafers from Ganwafer are used in various applications. Ganwafer has been ISO9001:2015, owns and shares four modern foundries that able to deliver a range of industry-standard products with utmost quality. We are capable enough to meet all of your requirements. Ganwafer has established the manufacturing technology for GaN epitaxy on Sapphire and freestanding GaN single crystal wafer substrate which is for UHB-LED and LD. Ganwafer develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze (VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Ganwafer has developed SiC crystal growth technology and SiC wafer processing technology, established a production line to manufacturer SiC substrate of polytype 4H and 6H in different quality grades for researcher and industry manufacturers,Which is applied in GaN epitaxy device,power devices, high-temperature device and optoelectronic Devices.As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,we are devoted to continuously improve the quality of currently substates and develop large size substrates, as well as epitaxial technology. Ganwafer has established production line of semiconductor materials – Ge(Germanium) Single Crystals and Wafers.
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AlGaN (Aluminum Gallium Nitride) on Sapphire / Silicon Template
The Al content of AlGaN on sapphire/silicon template affects the semiconductor band gap and directly determines its application in LED, LD or HEMT.
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Semiconductor Photo Mask on Quartz, Soda Lime Substrate
Semiconductor photo mask with nano-level fine patterns by lithography is a graphic transfer tool or master in the microelectronics manufacturing process.
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Undoped or Te / Ge Doped InSb (Indium Antimonide) Wafer
Compound semiconductor InSb (indium antimonide) wafer substrate is provided with Te doped or undoped N-type or Ge doped P-type for FET.
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Where is Xiamen Powerway Advanced Material Co. Ltd located?
The company Xiamen Powerway Advanced Material Co. Ltd is located in Xiamen City, Fujian, China. It's worth noting that the company may has more corporate locations
How many employees does Xiamen Powerway Advanced Material Co. Ltd approximately have?
As of the latest available information Xiamen Powerway Advanced Material Co. Ltd has around 1-10 employees worldwide.
When was Xiamen Powerway Advanced Material Co. Ltd founded?
Xiamen Powerway Advanced Material Co. Ltd was founded in 1990
In which industries does Xiamen Powerway Advanced Material Co. Ltd mainly work?
The company Xiamen Powerway Advanced Material Co. Ltd has it's main focus in the industries of Manufacturing
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