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Gallium Semiconductor
Singapore
C
11-50 Employees
2020
Key takeaway
The company, Gallium Semiconductor, specializes in Gallium Nitride (GaN) HEMT transistors, offering high-performance solutions for wireless telecom infrastructure, including the GTH2e-2425300P, a 300W GaN RF power transistor. Their products are designed to enhance efficiency and performance for next-generation cellular base stations.
Reference
Core business
Gallium Semiconductor | RF Transistor
Gallium Semiconductor are a global supplier of Gallium Nitride (GaN) HEMT transistors for the wireless telecom infrastructure market. We design, develop and manufacture RF power transistors to cost effectively deliver the highest performance and efficiency for next generation cellular base stations.
GaNPower International Inc.
-
- Employees
-
Key takeaway
GaNPower specializes in developing Gallium Nitride (GaN) based technology for power electronics, highlighting its potential for sustainable energy solutions. Their focus on GaN HEMT transistors, including a 650V/10A E-mode transistor, underscores their commitment to advancing this innovative technology.
Reference
Product
iGaN iGaN65030 – GaNPower
iGaN LGA package, 650V/10A iGaN E-mode Transistor *Engineering Sample Only*
Cambridge GaN Devices
Cambridge, United Kingdom
A
11-50 Employees
2016
Key takeaway
The company highlights its innovative ICeGaN™ GaN transistors, which offer enhanced performance and reliability, allowing operation with standard silicon gate drivers and eliminating the need for costly external interfaces. These transistors enable higher switching frequencies and greater energy efficiency, making them ideal for advanced power applications.
Reference
Product
CGD ICeGaN: Gallium Nitride Semiconductors | Cam GaN Devices
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FSB-GaN
Charlottesville, United States
B
1-10 Employees
2018
Key takeaway
The company highlights Gallium Nitride (GaN) as a superior material for transistors due to its fast switching capabilities, low on-resistance, and reduced power requirements. They also emphasize their advanced technologies for producing high-quality, cost-effective GaN substrates, making it a compelling choice for future semiconductor applications.
Reference
Core business
Future Semiconductor Business | Gallium Nitride | GaN Template | 2DLT
Discover future semiconductor. We provide Low-cost, Large-scale, and High-quality Gallium Nitride (GaN) substrates.
DICE
Linz, Austria
A
1-10 Employees
-
Key takeaway
Infineon Technologies offers CoolGaN™ transistors, which are Gallium Nitride (GaN) HEMTs known for their ultimate efficiency and reliability. Their advanced GaN solutions are designed to provide high performance for various applications.
Reference
Product
GaN HEMT – Gallium Nitride Transistor - Infineon Technologies
Learn more about our GaN HEMT Solutions - CoolGaN™ Transistors Offer the Highest Performance and the Most Reliable Solution on the Market
RFHIC
Anyang-si, South Korea
A
51-100 Employees
1999
Key takeaway
RFHIC is a global leader in providing Gallium Nitride (GaN) solutions, particularly in designing and manufacturing GaN-based transistors for wireless infrastructure applications, including 4G LTE and 5G macro base stations. Their portfolio includes a wide range of GaN on silicon carbide discrete transistors, highlighting their expertise in high-power RF and microwave devices.
Reference
Product
GaN SiC Transistors - Wireless Infrastructure - RFHIC Corporation
RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors designed for Wireless Infrastructure applications – operable sub-6GHz ranges designed for 4G LTE and 5G macro base stations
Qorvo, Inc.
Greensboro, United States
B
- Employees
-
Key takeaway
Qorvo provides a range of gallium nitride (GaN) discrete transistor products that operate over a wide bandwidth, highlighting their commitment to advancing RF and power technologies.
Reference
Product
GaN HEMTs - Qorvo
Qorvo offers a variety of gallium nitride (GaN) discrete transistor products with the ability to operate over a wide bandwidth. Visit our website to learn more.
Odyssey Semiconductor Technologies
Town of Ithaca, United States
B
11-50 Employees
2019
Key takeaway
The company emphasizes that Gallium Nitride (GaN) transistors are the future of high-voltage applications, offering greater efficiency and a smaller footprint compared to silicon and silicon carbide devices. With the growing demand for efficient power circuits, especially in electric vehicles, their vertical GaN technology addresses the need for high-voltage operation and performance.
Reference
Product
Technology - Odyssey Semiconductor Technologies, Inc.
Vertical GaN is powering an efficient future Breakthrough technology designed for performance and reliability with economics to support high-volume applications Learn More GaN vs SiC choice conundrum Gallium nitride (GaN) based power-switching transistors are superior to their silicon (Si) and silicon carbide (SiC) counterparts due to materials properties which allow for significantly smaller wafer area […]
Xiamen Powerway Advanced Material Co. Ltd
Xiamen City, China
D
1-10 Employees
1990
Key takeaway
Ganwafer specializes in the development and manufacturing of compound semiconductor materials, including Gallium Nitride (GaN) epitaxy on various substrates. Their advanced production capabilities and commitment to quality make them well-equipped to meet the needs of researchers and industry manufacturers in the GaN semiconductor sector.
Reference
Service
Professional Services in SiC, GaN, III-V Semiconductor Material
Professional services for wafer processing and technical support in SiC, GaN, III-V semiconductor wafers are offered for researchers and corporate users
Innoscience (Zhuhai) Technology Co., Ltd.
Zhuhai, China
D
501-1000 Employees
2015
Key takeaway
Innoscience is a leading Integrated Device Manufacturer (IDM) specializing in Gallium Nitride (GaN) technology, offering a diverse range of GaN-on-Silicon devices for various applications, including power delivery chargers, smartphones, and data centers. Their extensive 8-inch GaN-on-Si manufacturing capacity ensures the production of high-performance and reliable GaN transistors for both low and high voltage requirements.
Reference
Core business
Innoscience-Home
Technologies which have been searched by others and may be interesting for you:
Gallium Nitride (GaN) transistors are semiconductor devices that utilize gallium nitride as the primary material for their construction. Known for their ability to operate at high voltages, GaN transistors are ideal for applications involving power conversion and amplification. They offer superior efficiency compared to traditional silicon-based transistors, enabling smaller, lighter designs in electronic systems. These transistors are particularly valued in high-frequency applications, including RF amplifiers and power supplies. Their wide bandgap allows them to handle higher temperatures and voltages, making them a popular choice in industries such as telecommunications, automotive, and renewable energy. With the increasing demand for more efficient energy solutions, GaN transistors are becoming a cornerstone of modern electronic technology.
Gallium Nitride (GaN) transistors operate by utilizing the unique properties of GaN material, which allows for high efficiency and high-frequency operation. They function as switches or amplifiers in electronic circuits. When a voltage is applied to the GaN transistor's gate, it creates an electric field that allows current to flow between the source and drain terminals. This mechanism enables rapid switching capabilities, which is essential for applications such as power electronics, RF amplifiers, and fast charging systems. The advantages of GaN transistors include their ability to operate at higher voltages and temperatures compared to traditional silicon transistors. Additionally, they exhibit lower on-resistance, resulting in reduced power losses during operation. This combination of characteristics makes GaN transistors ideal for modern applications requiring efficiency and performance.
1. Higher Efficiency
Gallium Nitride (GaN) transistors exhibit superior efficiency compared to traditional silicon-based devices. This is largely due to their ability to operate at higher voltages and frequencies, reducing energy losses during power conversion.
2. Compact Size
The smaller size of GaN transistors allows for more compact circuit designs. This is particularly beneficial in applications where space is limited, such as in mobile devices and electric vehicles.
3. Thermal Performance
GaN transistors can handle higher temperatures and dissipate heat more effectively. This leads to improved reliability and longevity of the devices in high-performance applications.
4. Fast Switching Speed
These transistors support faster switching speeds, which enhances overall system performance. Faster switching reduces the time lost during transitions, resulting in better efficiency in power management systems.
5. High Power Density
GaN technology enables higher power density, making it ideal for applications requiring significant power in a small footprint. This is crucial for modern electronic devices that demand high performance without increasing size.
Gallium Nitride (GaN) transistors are widely employed in various high-performance applications due to their superior efficiency and thermal performance. One of the prominent uses is in power electronics, where they help improve energy conversion in devices such as power supplies and converters. Additionally, GaN transistors are integral in radio frequency (RF) amplifiers, benefiting sectors like telecommunications and satellite communications. Their ability to operate at higher frequencies and voltages makes them ideal for applications in electric vehicles, renewable energy systems, and advanced lighting technologies, including LED drivers.
Gallium Nitride (GaN) transistors offer significantly higher efficiency compared to traditional silicon transistors. Their ability to operate at higher voltages and temperatures allows for reduced energy losses during switching. This results in lower heat generation, which enhances overall performance and reliability in various applications. Moreover, GaN transistors have a faster switching speed, enabling them to handle high-frequency operations more effectively. This superior efficiency translates into smaller, lighter designs for electronic devices, making GaN a preferred choice for power electronics in sectors such as renewable energy, automotive, and telecommunications. The transition to GaN technology represents a substantial advancement in efficiency over silicon counterparts.
Some interesting numbers and facts about your company results for Gallium Nitride Gan Transistor
| Country with most fitting companies | United States |
| Amount of fitting manufacturers | 5842 |
| Amount of suitable service providers | 3589 |
| Average amount of employees | 11-50 |
| Oldest suiting company | 1990 |
| Youngest suiting company | 2020 |
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Some interesting questions that has been asked about the results you have just received for Gallium Nitride Gan Transistor
What are related technologies to Gallium Nitride Gan Transistor?
Based on our calculations related technologies to Gallium Nitride Gan Transistor are Glass, Superconductors, High-Performance Materials, Raw Materials, Phase Change Materials
Who are Start-Ups in the field of Gallium Nitride Gan Transistor?
Start-Ups who are working in Gallium Nitride Gan Transistor are Gallium Semiconductor
Which industries are mostly working on Gallium Nitride Gan Transistor?
The most represented industries which are working in Gallium Nitride Gan Transistor are Electronics and Electrical engineering, Other, IT, Software and Services, Semiconductor, Telecommunications
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