GTS - Global TCAD Solutions Logo

GTS - Global TCAD Solutions

Optimize designs across technologies – without getting lost in the process. Franz Schanovsky will share insights about the techniques and challenges of 3D TCAD modeling of a FLASH memory. We want you for software development for our Java applications, development of distributed systems, some GUI programming and data science and processing! In a performance & variability-aware DTCO flow, we benchmark Gate-all-around nanosheets for 3nm. Despite lower parasitic capacitances of fins, nanosheet SRAMs achieve better Vmin, read delay, and footprint.

Quick overview

Vienna, Austria

Founded in 2008

1-10 Employees

Additional information

Working industry

Semiconductor

Type of company

Educational institution, Manufacturer, Service provider

Ownership structure

Public Company

Locations

3 Locations

Number of products

11 Products

Number of services

5 Services

Specialised areas

Modeling, New materials, 3D TCAD, NanoWire, Variability, Advanced CMOS Logic, Circuit Simulation, Semiconductor Device Simulation, EDA, Semiconductors

Products & services of GTS - Global TCAD Solutions

GTS - Global TCAD Solutions offers a wide range of products and services

Product: GTS Nano-Device Simulator • Global TCAD Solutions

Product

GTS Nano-Device Simulator • Global TCAD Solutions

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Product: GTS Framework • Global TCAD Solutions

Product

GTS Framework • Global TCAD Solutions

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Product: TCAD Consulting • Global TCAD Solutions

Service

TCAD Consulting • Global TCAD Solutions

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Product: GTS Vision • Global TCAD Solutions

Product

GTS Vision • Global TCAD Solutions

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Product: GTS Cell Designer • Global TCAD Solutions

Product

GTS Cell Designer • Global TCAD Solutions

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Product: TCAD Services • Global TCAD Solutions

Service

TCAD Services • Global TCAD Solutions

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Product: GTS Structure • Global TCAD Solutions

Product

GTS Structure • Global TCAD Solutions

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Product: Products • Global TCAD Solutions

Product

Products • Global TCAD Solutions

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Use Cases of GTS - Global TCAD Solutions

Get insights into the use cases of GTS - Global TCAD Solutions

UseCase: V-NAND application example: Channel trans-conductance • Global TCAD Solutions

Use case

V-NAND application example: Channel trans-conductance • Global TCAD Solutions

V-NAND application example: Channel trans-conductance | V-NAND Transconductance Variability | Related | GTS Framework allows to study the effects of: | Furthermore, you can study the following variability sources: | News | Tutorials & Examples | Pages | Publications, White Papers | GTS TCAD Vienna

UseCase: Tutorials & Application Examples • Global TCAD Solutions

Use case

Tutorials & Application Examples • Global TCAD Solutions

Tutorials & Application Examples | Advanced Scripting - Tutorial | Advanced Scripting - Tutorial | Band-Edge Stress - Application Example | Band-Edge Stress - Application Example | Band-Edge Stress - Application Example | Band-Edge Stress - Application Example | Bias Temperature Instability - Tutorial | Bias Temperature Instability - Tutorial | Bias Temperature Instability - Tutorial | BTI Simulations with Comphy - Tutorial | BTI Simulations with Comphy - Tutorial | BTI Simulations with Comphy - Tutorial | Carbon Nano Tubes - Application Example | Carbon Nano Tubes - Application Example | Carbon Nano Tubes - Application Example | CMOS Heavy Ion Impact - Application Example | CMOS Heavy Ion Impact - Application Example | CMOS Heavy Ion Impact - Application Example | CMOS Logic - Application Example | CMOS Logic - Application Example | Creating LSG Technology Files - Tutorial | Creating LSG Technology Files - Tutorial | Creating LSG Technology Files - Tutorial | Creating LSG Technology Files - Tutorial | Device Editor - Tutorial | Device Editor - Tutorial | Device Editor - Tutorial | Device Simulation - Tutorial | Device Simulation - Tutorial | Device Simulation - Tutorial | DOE Table from File - Tutorial | DOE Table from File - Tutorial | DOE, Optimizer, Post-Processing - Tutorial | DOE, Optimizer, Post-Processing - Tutorial | DOE, Optimizer, Post-Processing - Tutorial | DTCO Based on CFET Full Cell RO - Application Example | DTCO Based on CFET Full Cell RO - Application Example | DTCO Based on CFET Full Cell RO - Application Example | DTCO Based on Full Cell RO - Application Example | DTCO Based on Full Cell RO - Application Example | DTCO Based on Full Cell RO - Application Example | DTCO Based on Nanosheet Full Cell RO - Application Example | DTCO Based on Nanosheet Full Cell RO - Application Example | DTCO Based on Nanosheet Full Cell RO - Application Example | DTCO Based on RC Analysis - Application Example | DTCO Based on RC Analysis - Application Example | DTCO Based on RC Analysis - Application Example | DTCO Based on RC Analysis of Complementary FETs - Application Example | DTCO Based on RC Analysis of Complementary FETs - Application Example | DTCO Based on RC Analysis of Complementary FETs - Application Example | DTCO FinFET N7 Reliability Post Minimos BTI - Application Example | DTCO FinFET N7 Reliability Post Minimos BTI - Application Example | DTCO FinFET N7 Reliability Post Minimos BTI - Application Example | DTCO FinFET N7 Reliability Post Minimos BTI - Application Example | DTCO FinFET N7 Reliability Post Minimos BTI - Application Example | DTCO FinFET N7 Spice Model Extractor - Application Example | DTCO FinFET N7 Spice Model Extractor - Application Example | DTCO FinFET N7 Spice Model Extractor - Application Example | DTCO FinFET N7 Spice RO - Application Example | DTCO FinFET N7 Spice RO - Application Example | DTCO FinFET N7 Spice RO - Application Example | DTCO FinFET N7 Spice RO - Application Example | DTCO FinFET N7 Spice RO with Var. and Rel. - Application Example | DTCO FinFET N7 Spice RO with Var. and Rel. - Application Example | DTCO FinFET N7 Spice RO with Var. and Rel. - Application Example | DTCO FinFET N7 Spice RO with Var. and Rel. - Application Example | DTCO FinFET N7 Spice RO with Var. and Rel. - Application Example | DTCO FinFET N7 Spice SRAM - Application Example | DTCO FinFET N7 Spice SRAM - Application Example | DTCO FinFET N7 Spice SRAM - Application Example | DTCO FinFET N7 Spice SRAM - Application Example | DTCO FinFET N7 Spice SRAM - Application Example | DTCO FinFET N7 Spice SRAM with Variability - Application Example | DTCO FinFET N7 Spice SRAM with Variability - Application Example | DTCO FinFET N7 Spice SRAM with Variability - Application Example | DTCO FinFET N7 Spice SRAM with Variability - Application Example | DTCO FinFET N7 Spice SRAM with Variability - Application Example | DTCO FinFET N7 Spice SRAM with Variability - Application Example | DTCO NS N3 Spice Model Extractor - Application Example | DTCO NS N3 Spice Model Extractor - Application Example | DTCO NS N3 Spice Model Extractor - Application Example | DTCO Spice RO using CFET – FinFin - Application Example | DTCO Spice RO using CFET – FinFin - Application Example | DTCO Spice RO using CFET – FinFin - Application Example | DTCO Spice RO using CFET – FinFin - Application Example | DTCO Spice RO using CFET – NsNs - Application Example | DTCO Spice RO using CFET – NsNs - Application Example | DTCO Spice RO using CFET – NsNs - Application Example | DTCO Spice RO using CFET – NsNs - Application Example | Ferroelectric Capacitors and Models - Application Example | Ferroelectric Capacitors and Models - Application Example | Ferroelectric Capacitors and Models - Application Example | Ferroelectrics - Tutorial | Ferroelectrics - Tutorial | Ferroelectrics - Tutorial | Ferroelectrics - Tutorial | FinFET iN14 Calibration - Application Example | FinFET iN14 Calibration - Application Example | FinFET iN14 Calibration - Application Example | GaN HEMT - Application Example | GaN HEMT - Application Example | GaN HEMT - Application Example | GaN HEMT - Application Example | GTS Nano Device Simulator Bulk FinFET - Application Example | GTS Nano Device Simulator Bulk FinFET - Application Example | GTS Nano Device Simulator Bulk FinFET - Application Example | GTS Nano Device Simulator Gate-All-Around FinFET - Application Example | GTS Nano Device Simulator Gate-All-Around FinFET - Application Example | GTS Nano Device Simulator Gate-All-Around FinFET - Application Example | GTS Nano Device Simulator Source-Drain Tunneling - Application Example | GTS Nano Device Simulator Source-Drain Tunneling - Application Example | GTS Nano Device Simulator Source-Drain Tunneling - Application Example | High-Voltage LDMOS - Tutorial | High-Voltage LDMOS - Tutorial | Image Sensor - Application Example | Image Sensor - Application Example | Image Sensor - Application Example | Import 3rd Party file for a GTS Minimos-NT simulation - Application Example | Import 3rd Party file for a GTS Minimos-NT simulation - Application Example | Import 3rd Party file for a GTS Minimos-NT simulation - Application Example | Import 3rd Party file for a GTS Minimos-NT simulation - Application Example | Import 3rd Party file for a GTS Minimos-NT simulation - Application Example | Introduction to Cell Designer - N7 Technology Simulation – Tutorial | Introduction to Cell Designer - N7 Technology Simulation – Tutorial | Introduction to Cell Designer - N7 Technology Simulation – Tutorial | Introduction to Cell Designer - N7 Technology Simulation – Tutorial | Irradiation Simulation - Tutorial | Irradiation Simulation - Tutorial | Irradiation Simulation - Tutorial | ISPP of SONOS Devices - Application Example | ISPP of SONOS Devices - Application Example | ISPP of SONOS Devices - Application Example | ISPP of VNAND Devices (2.5D) - Application Example | ISPP of VNAND Devices (2.5D) - Application Example | ISPP of VNAND Devices (2.5D) - Application Example | kp and Low-Field Simulations - Tutorial | kp and Low-Field Simulations - Tutorial | kp and Low-Field Simulations - Tutorial | Logic Cell Simulation with GTS Cell Designer - N7 Inverter Cell - Tutorial | Logic Cell Simulation with GTS Cell Designer - N7 Inverter Cell - Tutorial | Logic Cell Simulation with GTS Cell Designer - N7 Inverter Cell - Tutorial | Mechanical Stress Simulation - Application Example | Mechanical Stress Simulation - Application Example | Mechanical Stress Simulation - Application Example | Mechanical Stress Simulation - Application Example | Mixed-Mode Part I - Tutorial | Mixed-Mode Part I - Tutorial | Mixed-Mode Part I - Tutorial | Mixed-Mode Part II - Tutorial | Mixed-Mode Part II - Tutorial | Mixed-Mode Part II - Tutorial | Modeling of Interface Traps in Nano-scaled Devices - Application Example | Modeling of Interface Traps in Nano-scaled Devices - Application Example | Modeling of Interface Traps in Nano-scaled Devices - Application Example | Modeling of Interface Traps in Nano-scaled Devices - Application Example | MoS2 MOSFET Simulation Schottky Barrier Tunneling - Application Example | MoS2 MOSFET Simulation Schottky Barrier Tunneling - Application Example | MoS2 MOSFET Simulation Schottky Barrier Tunneling - Application Example | NDS FinFET N7 - Application Example | NDS FinFET N7 - Application Example | NDS FinFET N7 - Application Example | NDS NS N3 - Application Example | NDS NS N3 - Application Example | NDS NS N3 - Application Example | NDS NS N3 LSG - Application Example | NDS NS N3 LSG - Application Example | NDS NS N3 LSG - Application Example | NDS NS N3 LSG - Application Example | NDS Simulation on an Imported 3rd Party File - Application Example | NDS Simulation on an Imported 3rd Party File - Application Example | NDS Simulation on an Imported 3rd Party File - Application Example | NDS Simulation on an Imported 3rd Party File - Application Example | NDS Simulation on an Imported 3rd Party File - Application Example | NMOS at cryogenic temperatures using QFT - Application Example | NMOS at cryogenic temperatures using QFT - Application Example | NMOS at cryogenic temperatures using QFT - Application Example | Parasitics Extraction of an Inverter Cell - Application Example | Parasitics Extraction of an Inverter Cell - Application Example | Parasitics Extraction of an Inverter Cell - Application Example | Path-finding for Future Technologies - Application Example | Path-finding for Future Technologies - Application Example | Path-finding for Future Technologies - Application Example | Perturbation-Mode Variability Calculation for N7 FinFET - Application Example | Perturbation-Mode Variability Calculation for N7 FinFET - Application Example | Perturbation-Mode Variability Calculation for N7 FinFET - Application Example | Perturbation-Mode Variability Calculation for N7 FinFET - Application Example | Polycrystalline Ferroelectric Transistors - Application Example | Polycrystalline Ferroelectric Transistors - Application Example | Polycrystalline Ferroelectric Transistors - Application Example | Polycrystalline Ferroelectric Transistors - Application Example | Projects, ToolFolders, Device Simulation - Getting Started I Tutorial | Projects, ToolFolders, Device Simulation - Getting Started I Tutorial | Projects, ToolFolders, Device Simulation - Getting Started I Tutorial | Projects, ToolFolders, Device Simulation - Getting Started I Tutorial | Projects, ToolFolders, Device Simulation - Getting Started I Tutorial | Reliability Post Minimos BTI - Application Example | Reliability Post Minimos BTI - Application Example | Reliability Post Minimos BTI - Application Example | Reliability Post Minimos BTI - Application Example | Reliability Post Minimos BTI - Application Example | Retention of SONOS Devices - Application Example | Retention of SONOS Devices - Application Example | Retention of SONOS Devices - Application Example | Schottky Barrier Diode - Application Example | Schottky Barrier Diode - Application Example | Schottky Barrier Diode - Application Example | Schrödinger-Poisson Simulation - Tutorial | Schrödinger-Poisson Simulation - Tutorial | Schrödinger-Poisson Simulation - Tutorial | Schrödinger-Poisson Simulation - Tutorial | Self-Heating Simulation of Inverter Cells - Application Example | Self-Heating Simulation of Inverter Cells - Application Example | Self-Heating Simulation of Inverter Cells - Application Example | Self-Heating Simulation of Inverter Cells - Application Example | Series Resistance Extraction - Application Example | Series Resistance Extraction - Application Example | Series Resistance Extraction - Application Example | Series Resistance Extraction - Application Example | SiC diode using QFT - Application Example | SiC diode using QFT - Application Example | SiC diode using QFT - Application Example | SiC MESFET - Application Example | SiC MESFET - Application Example | SiC MESFET - Application Example | SiC Vertical DMOS - Application Example | SiC Vertical DMOS - Application Example | SiC Vertical DMOS - Application Example | Simulation Flow with DOE, Process and Device Splits - Getting Started II Tutorial | Simulation Flow with DOE, Process and Device Splits - Getting Started II Tutorial | Simulation Flow with DOE, Process and Device Splits - Getting Started II Tutorial | Simulation Flow with DOE, Process and Device Splits - Getting Started II Tutorial | Simulation Flow with DOE, Process and Device Splits - Getting Started II Tutorial | SOI FinFET - Application Example | SOI FinFET - Application Example | SOI FinFET Discrete Traps and Dopants - Application Example | SOI FinFET Discrete Traps and Dopants - Application Example | SOI FinFET Discrete Traps and Dopants - Application Example | Transconductance Variability in VNAND Devices - Application Example | Transconductance Variability in VNAND Devices - Application Example | Transconductance Variability in VNAND Devices - Application Example | Variability Simulation - Tutorial | Variability Simulation - Tutorial | Variability Simulation - Tutorial | VSP – Effect of Interface Traps on Mobility - Application Example | VSP – Effect of Interface Traps on Mobility - Application Example | VSP – Effect of Interface Traps on Mobility - Application Example | VSP – Effect of Interface Traps on Mobility - Application Example | VSP Bulk Band Structure - Application Example | VSP Bulk Band Structure - Application Example | VSP Bulk Band Structure - Application Example | VSP Bulk Band Structure - Application Example | VSP Double-Gate nMOS Capacitance - Application Example | VSP Double-Gate nMOS Capacitance - Application Example | VSP Double-Gate nMOS Capacitance - Application Example | VSP FinFET N7 Mobility - Application Example | VSP FinFET N7 Mobility - Application Example | VSP FinFET N7 Mobility - Application Example | VSP FinFET nMOS - Application Example | VSP FinFET nMOS - Application Example | VSP FinFET nMOS - Application Example | VSP GAA nMOS - Application Example | VSP GAA nMOS - Application Example | VSP GAA nMOS - Application Example | VSP NS N3 Mobility - Application Example | VSP NS N3 Mobility - Application Example | VSP NS N3 Mobility - Application Example | VSP Planar nMOS Capacitance - Application Example | VSP Planar nMOS Capacitance - Application Example | VSP Planar nMOS Capacitance - Application Example | VSP Planar Universal Mobility Curves - Application Example | VSP Planar Universal Mobility Curves - Application Example | VSP Planar Universal Mobility Curves - Application Example | VSP simulation on cuts of an imported 3rd Party file - Application Example | VSP simulation on cuts of an imported 3rd Party file - Application Example | VSP simulation on cuts of an imported 3rd Party file - Application Example | VSP simulation on cuts of an imported 3rd Party file - Application Example | VSP simulation on cuts of an imported 3rd Party file - Application Example | GTS TCAD Vienna

Headquarter of GTS - Global TCAD Solutions

GTS - Global TCAD Solutions operates in 3 countries around the world

City: Vienna

State: -

Country: Austria

Locations of GTS - Global TCAD Solutions

Get an overview of the locations of GTS - Global TCAD Solutions

Location

Country

State

City

Headquarter

Austria

-

Vienna

GTS Representative Office Taiwan, R.O.C.

Taiwan

-

Taichung

Partner Office India: Cadre Design Systems

India

Uttar Pradesh

Ghaziabad

Frequently asked questions (FAQ) about GTS - Global TCAD Solutions

Some frequent questions that have been asked about GTS - Global TCAD Solutions

The company headquarter of GTS - Global TCAD Solutions is located in Vienna, Austria. GTS - Global TCAD Solutions has subsidiaries in Taiwan, India

As of the latest available information GTS - Global TCAD Solutions has around 1-10 employees worldwide.

GTS - Global TCAD Solutions was founded in 2008

The company GTS - Global TCAD Solutions has it's main focus in the industries of Semiconductor

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